Measurement of Silicon Nanoparticles Temperature by Raman Spectroscopy

Alida F. Alykova; Maria S. Grigoryeva; Irina N. Zavestovskaya; Victor Yu. Timoshenko

doi:10.18287/JBPE21.07.010303

Authors

Alida F. Alykova National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Russian Federation Prokhorov General Physics Institute of RAS, Moscow, Russian Federation
Maria S. Grigoryeva National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Russian Federation P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russian Federation
Irina N. Zavestovskaya National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Russian Federation P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russian Federation
Victor Yu. Timoshenko National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Russian Federation P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russian Federation Lomonosov Moscow State University, Russian Federation

DOI:

https://doi.org/10.18287/JBPE21.07.010303

Keywords:

Raman scattering, nanoparticles, nanocrystalline silicon, porous silicon, hyperthermia

Abstract

The temperature of silicon nanoparticles under laser photo-induced heating is determined from the ratio of the intensities of the Stokes and anti-Stokes components of the Raman scattering. The obtained results of the dependence of nanoparticles temperature on the laser radiation intensity and the temperature dependence of the Raman line position maybe used to determine the optimal regimes of photo-hyperthermia enhanced by silicon nanoparticles for cancer therapy.

Author Biography

Alida F. Alykova, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Russian Federation Prokhorov General Physics Institute of RAS, Moscow, Russian Federation

PhD-student

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